The behavior of H inβ-Ga₂O₃ is of substantial interest because it is a common residual impurity that is present inβ-Ga₂O₃, regardless of the synthesis methods. Herein, we report the influences of H-plasma exposure on the electric and optical properties of the heteroepitaxialβ-Ga₂O₃ thin films grown on sapphire substrates by chemical vapor deposition. The results indicate that the H incorporation leads to a significantly increased electrical conductivity, a greatly reduced defect-related photoluminescence emission, and a slightly enhanced transmittance, while it has little effect on the crystalline quality of theβ-Ga₂O₃ films. The significant changes in the electrical and optical properties ofβ-Ga₂O₃ may originate from the formation of shallow donor states and the passivation of the defects by the incorporated H. Temperature dependent electrical properties of the H-incorporatedβ-Ga₂O₃ films are also investigated, and the dominant scattering mechanisms at various temperatures are discussed.The behavior of H inβ-Ga₂O₃ is of substantial interest because it is a common residual impurity that is present inβ-Ga₂O₃, regardless of the synthesis methods. Herein, we report the influences of H-plasma exposure on the electric and optical properties of the heteroepitaxialβ-Ga₂O₃ thin films grown on sapphire substrates by chemical vapor deposition. The results indicate that the H incorporation leads to a significantly increased electrical conductivity, a greatly reduced defect-related photoluminescence emission, and a slightly enhanced transmittance, while it has little effect on the crystalline quality of theβ-Ga₂O₃ films. The significant changes in the electrical and optical properties ofβ-Ga₂O₃ may originate from the formation of shallow donor states and the passivation of the defects by the incorporated H. Temperature dependent electrical properties of the H-incorporatedβ-Ga₂O₃ films are also investigated, and the dominant scattering mechanisms at various temperatures are discussed.

针对在多腔型法布里-珀罗传感器中难以提取动态信号的问题，提出了一种用于多腔型法布里-珀罗传感器的三波长解调技术。该解调技术使用放大自发辐射光源和三个固定中心波长的宽带光纤滤波器，使干涉现象仅发生在多腔型光纤法布里-珀罗传感器的短腔中，以此提取较短腔的三个干涉信号。建立了校正算法和反正切算法来提取振动信号。实验结果表明，该解调技术成功提取了频率为1 kHz、峰峰值幅度为2.6 μm的振动信号。解调速度为500 kHz，解调分辨率为0.25 nm。该解调技术具有系统紧凑、成本低、速度快、鲁棒性高等优点，在多腔型法布里-珀罗传感器方面有巨大的潜力。